2025

1. Katie R. Gann, Naomi A. Pieczulewski, Cameron A. Gorsak, Joshua T. Buontempo, Brenton A. Noesges, Thaddeus Asel, Daniel M. Dryden, Hari P. Nair, David A. Mueller, Michael O. Thompson; “Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga₂O₃.,” J. Appl. Phys. 21 September 2025; 138 (11): 115302.
2. Naomi Pieczulewski, Kathleen T. Smith, Corey M. Efaw, Arjan Singh, Cameron A. Gorsak, Joshua T. Buontempo, Jesse Wensel, Kathy Azizie, Katie Gann, Michael O. Thompson, Darrell G. Schlom, Farhan Rana, Hari P. Nair, Steven M. Hues, Elton Graugnard, Paul H. Davis, Debdeep Jena, Huili Grace Xing, David A. Muller, “Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga₂O₃ by removing surface carbon,” APL Mater. 1 June 2025; 13 (6): 061122.

2024

1. C. A. Gorsak, H. J. Bowman, K. R. Gann, J. T. Buontempo, K. T. Smith, P. Tripathi, J. Steele, D. Jena, D. G. Schlom, H. G. Xing, M. O. Thompson, and H. P. Nair, “In situ etching of β-Ga₂O₃ using tert-butyl chloride in an mocvd system,” Applied Physics Letters, vol. 125, no. 24, p. 242 103, Dec. 2024, ISSN: 0003-6951.
2. Kathleen T. Smith, Cameron A. Gorsak, Joshua T. Buontempo, Bennett J. Cromer, Takumi Ikenoue, Hemant Gulupalli, Michael O. Thompson, Debdeep Jena, Hari P. Nair, Huili Grace Xing, “Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga₂O₃ for interface quality and minimal surface modification“. J. Appl. Phys. 7 December 2024; 136 (21): 215302.
3. Jian V. Li, Yunjo Kim, Adam R. Charnas, Brenton A. Noesges, Prescott E. Evans, Thaddeus J. Asel, Adam T. Neal, Cameron A. Gorsak, Hari P. Nair and Shin Mou, “Mercury-probe measurement of electron mobility in β-Ga₂O₃ using junction moderated dielectric relaxation,” Jpn. J. Appl. Phys. 63 101002 (2024).
4. J. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, Michael O. Thompson, H. G. Xing, D. Jena, H. P. Nair, “Accumulation and removal of Si impurities on β-Ga₂O₃ arising from ambient air exposure,” Appl. Phys. Lett. 11 March 2024; 124 (11): 111601.
5. Katie R. Gann, Naomi Pieczulewski, Cameron A. Gorsak, Karen Heinselman, Thaddeus J. Asel, Brenton A. Noesges, Kathleen T. Smith, Daniel M. Dryden, Huili Grace Xing, Hari P. Nair, David A. Muller, Michael O. Thompson, “Silicon implantation and annealing in β-Ga₂O₃: Role of ambient, temperature, and time,” J. Appl. Phys. 7 January 2024; 135 (1): 015302.

2023

1. Kathleen T. Smith, Cameron A. Gorsak, Avijit Kalra, Bennett J. Cromer, Kathy Azizie, Daniel M. Dryden, Darrell G. Schlom, Debdeep Jena, Hari P. Nair, Huili Grace Xing, “Non-alloyed ohmic contacts to (010) β-Ga₂O₃ with low contact resistance,” Appl. Phys. Lett. 11 December 2023; 123 (24): 242101.
2. Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom, “Silicon-doped β-Ga₂O₃ films grown at 1 µm/h by suboxide molecular-beam epitaxy,” APL Mater. 1 April 2023; 11 (4): 041102.

For a complete list of publications: Hari Nair